Publications

NLR develops technical publications about its R&D activities in power electronics materials and manufacturing exploration.

Do We Really Need All That Data: From Data to Agency in Automated Microscopy, Microscopy Today (2026)

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties, APL Computational Physics (2026)

Phonon Selection and Interference in Momentum-resolved Electron Energy Loss Spectroscopy, arXiv (2026)

Epitaxial Growth and Semiconductor Properties of NiGa2O4 spinel for Ga2O3/NiO interfaces, arXiv (2025)

Reduced Thermal Resistance of Al-rich AlGaN HEMTs via Top-side Diamond Integration, APL Electronic Devices (2025)

Dielectric Properties of Conducting Boron-Doped Diamond, Applied Optics (2025)

Temperature Invariant, Nearly Zero Temperature Coefficient of Resistivity in Si-Doped Titanium Nitrides, Advanced Materials (2025)

Self-Driving Microscopy for Ai/Ml-Enabled Physics Discovery and Materials Optimization, The Bridge (2025)

Characterization of Extended Defect Evolution in 1.2–12μm Thick Homoepitaxial (010) Β-Ga2o3 Grown by Close-Injection Showerhead Metal-Organic Chemical Vapor Deposition, APL Materials (2025)

Emerging Ultra-Wide Band Gap Semiconductors for Future High-Frequency Electronics, arXiv (2025)

Stability, Growth, and Doping of In2(Si, Ge)2o7: Promising N-Type Wide-Bandgap Semiconductors, APL Materials (2025)